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a2t21h100--25sr3 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 18 w asymmetrical doherty rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 mhz. 2100 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 250 ma, v gsb =0.2vdc,p out = 18 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 2110 mhz 17.3 52.1 8.2 ?32.4 2140 mhz 17.4 51.0 8.0 ?33.1 2170 mhz 17.4 50.5 8.0 ?35.0 features ? advanced high performance in--package doherty ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems document number: a2t21h100--25s rev. 0, 6/2015 freescale semiconductor technical data 2110?2170 mhz, 18 w avg., 28 v airfast rf power ldmos transistor a2t21h100--25sr3 ni--780s--4l4s figure 1. pin connections (top view) rf outa /v dsa rf outb /v dsb rf ina /v gsa rf inb /v gsb vbw a (1) n.c. vbw b (1) n.c. 18 45 27 36 carrier peaking 1. device cannot operate with the v dd current supplied through pin 5 and pin 8. ? freescale semiconductor, inc., 2015. all rights reserved.
2 rf device data freescale semiconductor, inc. a2t21h100--25sr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 193 2.9 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 72 ? c, 18 w avg., w--cdma, 28 vdc, i dqa = 250 ma, v gsb =0.2vdc, 2140 mhz r ? jc 0.76 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iii table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics -- side a, carrier gate threshold voltage (v ds =10vdc,i d =40 ? adc) v gs(th) 0.8 1.2 1.6 vdc gate quiescent voltage (v dd =28vdc,i da = 250 madc, measured in functional test) v gsa(q) 1.5 1.8 2.3 vdc drain--source on--voltage (v gs =10vdc,i d =0.4adc) v ds(on) 0.1 0.15 0.3 vdc on characteristics -- side b, peaking gate threshold voltage (v ds =10vdc,i d =60 ? adc) v gs(th) 0.8 1.2 1.6 vdc drain--source on--voltage (v gs =10vdc,i d =0.6adc) v ds(on) 0.1 0.15 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http:// www.freescale.com/rf/calculators. 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf and search for an1955. 4. each side of device measured separately. (continued)
a2t21h100--25sr3 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 250 ma, v gsb =0.2vdc,p out =18wavg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 16.5 17.4 19.5 db drain efficiency ? d 47.3 50.5 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 7.3 8.0 ? db adjacent channel power ratio acpr ? ?35.0 ?29.8 dbc load mismatch (2) (in freescale doherty test fixture, 50 ohm system) i dqa = 250 ma, v gsb = 0.2 vdc, f = 2140 mhz, 12 ? sec(on), 12% duty cycle vswr 10:1 at 32 vdc, 126 w pulsed cw output power (3 db input overdrive from 78 w pulsed cw rated power) no device degradation typical performance (2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 250 ma, v gsb =0.2vdc, 2110?2170 mhz bandwidth p out @ 1 db compression point, cw p1db ? 75 ? w p out @ 3 db compression point (3) p3db ? 112 ? w am/pm (maximum value measured at the p3db compression point across the 2110?2170 mhz frequency range) ? ? ?21.9 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 120 ? mhz gain flatness in 60 mhz bandwidth @ p out =18wavg. g f ? 0.17 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.01 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) (4) ? p1db ? 0.006 ? db/ ? c table 5. ordering information device tape and reel information package a2t21h100--25sr3 r3 suffix = 250 units, 44 mm tape width, 13--inch reel ni--780s--4l4s 1. part internally matched both on input and output. 2. measurements made with device in an a symmetrical doherty configuration. 3. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf. 4. exceeds recommended operating conditions. see cw operation data in maximum ratings table.
4 rf device data freescale semiconductor, inc. a2t21h100--25sr3 figure 2. a2t21h100--25sr3 test circuit component layout cut out area c19 a2t21h100--25s rev. 1 d60961 v dda v gga v ddb v ggb c p r2 c1 c2 r3 c3 c4 c5 c6 z1 r1 c7 c8 r5 r4 c18 c17 c16 c15 c14 c13 c12 c11 c10 c9 table 6. a2t21h100--25sr3 test circuit component designations and values part description part number manufacturer c1, c8, c10, c11, c16, c18 10 ? f chip capacitors c5750x7s2a106m230kb tdk c2, c4, c5, c7, c12, c13, c14, c17 10 pf chip capacitors atc600f100jt250xt atc c3, c6, c15 0.5 pf chip capacitors atc600f0r5bt250xt atc c9, c19 220 ? f, 50 v electrolytic capacitors 227cks050m illinois capacitor r1 50 ? , 10 w chip resistor c10a50z4 anaren r2, r5 10 k ? , 1/4 w chip resistors crcw120610k0jnea vishay r3, r4 5.6 ? , 1/4 w chip resistors crcw12065r60fkea vishay z1 2000?2300 mhz band, 90 ? , 5 db directional coupler x3c21p1-05s anaren pcb rogers ro4350b, 0.020 ? , ? r =3.66 d60961 mtl
a2t21h100--25sr3 5 rf device data freescale semiconductor, inc. typical characteristics ? 2110?2170 mhz parc (db) ?2.2 ?1.4 ?1.6 ?1.8 ?2 ?2.4 2060 f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 18 watts avg. 16.9 17.9 17.8 17.7 ?38 58 56 54 52 ?28 ?30 ?32 ?34 ? d , drain efficiency (%) g ps , power gain (db) 17.6 17.5 17.4 17.3 17.2 17.1 17 2080 2100 2120 2140 2160 2180 2200 2220 50 ?36 acpr (dbc) figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ?90 0 ?15 ?30 ?60 1 300 imd, intermodulatio n distortion (dbc) ?45 figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) ?1 ?3 20 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 10 25 30 40 35 65 60 55 50 45 40 ? d ? drain efficiency (%) 35 ? d parc acpr (dbc) ?38 ?26 ?28 ?30 ?34 ?32 ?36 17.6 g ps , power gain (db) 17.4 17.2 17 16.8 16.6 16.4 g ps ?5 1 acpr ? d parc g ps im5--u im7--l im7--u im3--l 100 ?1 db = 13 w input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf ?2 db = 19 w ?3 db = 25.6 w v dd =28vdc,i dqa = 250 ma, v gsb =0.2vdc f = 2140 mhz, single--carrier w--cdma, 3.84 mhz channel bandwidth acpr 15 ?75 v dd =28vdc,p out = 11 w (pep), i dqa = 250 ma v gsb = 0.2 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz im3--u im5--l input signal par = 9.9 db @ 0.01% probab ility on ccdf v dd =28vdc,p out =18w(avg.),i dqa = 250 ma, v gsb =0.2vdc single--carrier w--cdma, 3.84 mhz channel bandwidth
6 rf device data freescale semiconductor, inc. a2t21h100--25sr3 typical characteristics ? 2110?2170 mhz 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?10 ?20 10 22 0 90 75 60 45 30 ? d , drain efficiency (%) g ps , power gain (db) 20 18 10 100 200 15 ?60 acpr (dbc) 16 14 12 0 ?30 ?40 ?50 figure 7. broadband frequency response 12 18 f, frequency (mhz) v dd =28vdc p in =0dbm i dqa = 250 ma v gsb =0.2vdc 16 15 14 gain (db) 17 13 1850 1950 2050 2150 2250 2350 2450 gain acpr 2110 mhz g ps 2140 mhz 2170 mhz 2170 mhz 2140 mhz 2110 mhz ? d v dd =28vdc,i dqa = 250 ma, v gsb = 0.2 vdc, single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf 2110 mhz 2170 mhz 2140 mhz
a2t21h100--25sr3 7 rf device data freescale semiconductor, inc. table 7. carrier side load pull performance ? maximum power tuning v dd =28vdc,i dqa = 237 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 16.2 ? j20.6 14.5 + j19.4 13.0 ? j11.6 19.9 46.6 45 57.2 ?15 2140 22.6 ? j22.0 18.4 + j19.4 11.3 ? j8.94 19.7 46.6 46 57.7 ?16 2170 30.0 ? j15.0 25.1 + j17.0 12.1 ? j10.2 19.6 46.7 47 58.1 ?15 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 16.2 ? j20.6 16.6 + j21.3 12.8 ? j12.8 17.7 47.4 55 58.3 ?21 2140 22.6 ? j22.0 22.3 + j20.9 12.2 ? j11.4 17.5 47.4 55 58.5 ?22 2170 30.0 ? j15.0 30.4 + j16.9 12.7 ? j12.3 17.4 47.5 56 58.8 ?20 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 8. carrier side load pull performance ? maximum drain efficiency tuning v dd =28vdc,i dqa = 237 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 16.2 ? j20.6 11.6 + j22.0 15.5 + j2.97 22.7 44.8 30 68.7 ?28 2140 22.6 ? j22.0 16.6 + j23.8 13.6 + j2.89 22.4 44.8 30 68.6 ?30 2170 30.0 ? j15.0 24.7 + j23.1 13.3 + j1.92 22.2 45.0 31 68.8 ?27 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 16.2 ? j20.6 13.0 + j23.6 14.4 + j1.73 20.3 45.6 36 69.0 ?37 2140 22.6 ? j22.0 18.9 + j25.5 12.6 + j1.63 20.1 45.5 36 68.7 ?39 2170 30.0 ? j15.0 29.3 + j24.0 13.3 + j0.91 20.0 45.7 37 69.0 ?35 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. a2t21h100--25sr3 table 9. peaking side load pull performance ? maximum power tuning v dd =28vdc,v gsb =0.2vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 9.12 ? j16.9 10.8 + j19.0 6.94 ? j11.9 14.2 48.6 72 61.8 ?31 2140 12.3 ? j17.6 15.2 + j19.5 7.25 ? j12.4 14.1 48.5 70 60.8 ?32 2170 17.3 ? j16.3 21.2 + j18.5 7.13 ? j12.8 14.0 48.4 70 60.3 ?31 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 9.12 ? j16.9 12.8 + j20.5 7.33 ? j13.3 12.2 49.2 83 62.3 ?38 2140 12.3 ? j17.6 18.7 + j20.4 7.57 ? j13.9 12.0 49.1 82 61.1 ?39 2170 17.3 ? j16.3 26.4 + j17.2 7.78 ? j15.1 11.9 49.1 81 60.0 ?38 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 10. peaking side load pull performance ? maximum drain efficiency tuning v dd =28vdc,v gsb =0.2vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 9.12 ? j16.9 7.84 + j19.6 13.9 ? j3.44 15.6 46.2 42 73.9 ?40 2140 12.3 ? j17.6 11.4 + j21.4 13.0 ? j3.73 15.5 46.3 42 73.1 ?40 2170 17.3 ? j16.3 16.4 + j23.3 12.0 ? j1.88 15.2 45.7 37 72.8 ?43 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 9.12 ? j16.9 9.75 + j21.2 12.6 ? j3.97 13.6 46.9 49 74.0 ?54 2140 12.3 ? j17.6 15.7 + j22.5 12.1 ? j6.94 13.4 47.6 57 72.9 ?49 2170 17.3 ? j16.3 23.6 + j22.1 11.2 ? j6.81 13.2 47.5 57 72.7 ?50 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
a2t21h100--25sr3 9 rf device data freescale semiconductor, inc. p1db -- typical carrier side load pull contours ? 2140 mhz real ( ? ) -- 2 5 10 -- 5 imaginary ( ? ) 5 10 15 -- 5 3 0 0 -- 1 0 -- 1 5 0 20 5 -- 2 0 25 real ( ? ) -- 2 5 10 -- 5 imaginary ( ? ) 5 10 15 -- 5 3 0 0 -- 1 0 -- 1 5 0 20 5 -- 2 0 25 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 8. p1db load pull output power contours (dbm) real ( ? ) -- 2 5 10 -- 5 imaginary ( ? ) 5 10 15 -- 5 3 0 0 -- 1 0 -- 1 5 0 figure 9. p1db load pull efficiency contours (%) figure 10. p1db load pull gain contours (db) figure 11. p1db load pull am/pm contours ( ? ) 20 5 -- 2 0 25 real ( ? ) -- 2 5 10 -- 5 imaginary ( ? ) 5 10 15 -- 5 3 0 0 -- 1 0 -- 1 5 0 20 5 -- 2 0 25 p e 42.5 43 52 p e ?14 p e 21.5 21 22 p e 43.5 44 44.5 45 45.5 46 46.5 54 56 58 60 62 64 66 68 19 19.5 20 20.5 22.5 23 ?16 ?18 ?20 ?22 ?26 ?28 ?30 ?24
10 rf device data freescale semiconductor, inc. a2t21h100--25sr3 p3db -- typical carrier side load pull contours ? 2140 mhz real ( ? ) -- 2 5 10 -- 5 imaginary ( ? ) 5 10 15 -- 5 3 0 0 -- 1 0 -- 1 5 0 20 5 -- 2 0 25 real ( ? ) -- 2 5 10 -- 5 imaginary ( ? ) 5 10 15 -- 5 3 0 0 -- 1 0 -- 1 5 0 20 5 -- 2 0 25 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p3db load pull output power contours (dbm) real ( ? ) -- 2 5 10 -- 5 imaginary ( ? ) 5 10 15 -- 5 3 0 0 -- 1 0 -- 1 5 0 figure 13. p3db load pull efficiency contours (%) figure 14. p3db load pull gain contours (db) figure 15. p3db load pull am/pm contours ( ? ) 20 5 -- 2 0 25 real ( ? ) -- 2 5 10 -- 5 imaginary ( ? ) 5 10 15 -- 5 3 0 0 -- 1 0 -- 1 5 0 20 5 -- 2 0 25 p e 43.5 44 44.5 45 45.5 46.5 46 47 52 54 56 58 60 62 64 66 68 p e 17 17.5 18 p e 18.5 19 19.5 20 20.5 21 ?20 p e ?22 ?24 ?26 ?28 ?30 ?32 ?34 ?36
a2t21h100--25sr3 11 rf device data freescale semiconductor, inc. p1db -- typical peaking side load pull contours ? 2140 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 16. p1db load pull output power contours (dbm) real ( ? ) -- 2 5 5 -- 5 imaginary ( ? ) 5 10 15 30 0 -- 1 0 -- 1 5 0 figure 17. p1db load pull efficiency contours (%) figure 18. p1db load pull gain contours (db) figure 19. p1db load pull am/pm contours ( ? ) 20 -- 2 0 25 real ( ? ) -- 2 5 5 -- 5 imaginary ( ? ) 5 10 15 30 0 -- 1 0 -- 1 5 0 20 -- 2 0 25 real ( ? ) -- 2 5 5 -- 5 imaginary ( ? ) 5 10 15 30 0 -- 1 0 -- 1 5 0 20 -- 2 0 25 real ( ? ) -- 2 5 5 -- 5 imaginary ( ? ) 5 10 15 30 0 -- 1 0 -- 1 5 0 20 -- 2 0 25 p e 44.5 45 45.5 46 46.5 p e p e 47.5 48 47 58 60 62 64 66 68 70 72 11.5 12 12.5 p e 13 13.5 14 14.5 15 14 ?30 ?32 ?34 ?36 ?38 ?40 ?42 ?44
12 rf device data freescale semiconductor, inc. a2t21h100--25sr3 p3db -- typical peaking side load pull contours ? 2140 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 20. p3db load pull output power contours (dbm) real ( ? ) -- 2 5 5 -- 5 imaginary ( ? ) 5 10 15 30 0 -- 1 0 -- 1 5 0 figure 21. p3db load pull efficiency contours (%) figure 22. p3db load pull gain contours (db) figure 23. p3db load pull am/pm contours ( ? ) 20 -- 2 0 25 real ( ? ) -- 2 5 5 -- 5 imaginary ( ? ) 5 10 15 30 0 -- 1 0 -- 1 5 0 20 -- 2 0 25 real ( ? ) -- 2 5 5 -- 5 imaginary ( ? ) 5 10 15 30 0 -- 1 0 -- 1 5 0 20 -- 2 0 25 real ( ? ) -- 2 5 5 -- 5 imaginary ( ? ) 5 10 15 30 0 -- 1 0 -- 1 5 0 20 -- 2 0 25 p e 45 45.5 46 46.5 47 47.5 48 48.5 49 p e 56 58 60 66 68 62 64 70 72 11 p e 9.5 10 10.5 11.5 12 12.5 13 p e ?36 ?38 ?40 ?42 ?44 ?46 ?48 ?50 ?52
a2t21h100--25sr3 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. a2t21h100--25sr3
a2t21h100--25sr3 15 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .freescale.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 june 2015 ? initial pre--release of data sheet
16 rf device data freescale semiconductor, inc. a2t21h100--25sr3 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2015 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: a2t21h100--25s rev. 0, 6/2015

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